RF FETs, MOSFETs
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BLF6G27L-40P,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 17DB SOT1121A | 0 | $0.00 | |
|
BLF6G22L-40P,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 19DB SOT1121A | 0 | $0.00 | |
BLF6G15LS-500H,112
|
Ampleon USA Inc. | RF FET LDMOS 100V 16DB SOT539B | 0 | $0.00 | |
BLF6G15L-500H,112
|
Ampleon USA Inc. | RF FET LDMOS 100V 16DB SOT539A | 0 | $0.00 | |
MRF8P20140WHR5
|
NXP USA Inc. | FET RF 2CH 65V 1.91GHZ NI780-4 | 0 | $0.00 | |
|
MRF8P20165WHR5
|
NXP USA Inc. | FET RF 2CH 65V 2.01GHZ NI780-4 | 0 | $0.00 | |
NE5531079A-A
|
CEL | FET RF 30V 460MHZ 79A | 0 | $0.00 | |
NE3515S02-A
|
CEL | FET RF HFET 12GHZ 2V 10MA S02 | 0 | $0.00 | |
BLF7G27LS-90P,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 18.5DB SOT1121B | 0 | $0.00 | |
|
BLF7G27LS-150P,112
|
Ampleon USA Inc. | RF FET LDMOS 65V 16DB SOT539B | 0 | $0.00 |