FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
DMG6601LVT-7
|
Diodes Incorporated | MOSFET N/P-CH 30V 26TSOT | 159595 | $0.00 | |
SSM6N43FU,LF
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A US6 | 4875 | $0.00 | |
SSM6L36FE,LM
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | 7177 | $0.00 | |
DMN62D0UDW-7
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.35A | 16661 | $0.00 | |
NX3008PBKV,115
|
Nexperia USA Inc. | MOSFET 2P-CH 30V 0.22A SOT666 | 17720 | $0.00 | |
SSM6N44FE,LM
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A ES6 | 47235 | $0.00 | |
NTZD3154NT5G
|
ON Semiconductor | MOSFET 2N-CH 20V 0.54A SOT563 | 19279 | $0.00 | |
DMP2200UDW-7
|
Diodes Incorporated | MOSFET 2P-CH 20V 0.9A SOT363 | 39684 | $0.00 | |
NX3008NBKV,115
|
Nexperia USA Inc. | MOSFET 2N-CH 30V 0.4A SOT666 | 12584 | $0.00 | |
2N7002PS,125
|
Nexperia USA Inc. | MOSFET 2N-CH 60V 0.32A 6TSSOP | 13707 | $0.00 |
DMG6601LVT-7
SSM6N43FU,LF
SSM6L36FE,LM
DMN62D0UDW-7
NX3008PBKV,115
NTZD3154NT5G
2N7002PS,125