FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
DMC2450UV-7
|
Diodes Incorporated | MOSFET N/P-CH 20V SOT563 | 7825 | $0.00 | |
PMDT670UPE,115
|
Nexperia USA Inc. | MOSFET 2P-CH 20V 0.55A SOT666 | 16558 | $0.00 | |
UM6K31NTN
|
ROHM Semiconductor | MOSFET 2N-CH 60V 0.25A UMT6 | 34898 | $0.00 | |
|
NX3008CBKV,115
|
Nexperia USA Inc. | MOSFET N/P-CH 30V SOT666 | 16609 | $0.00 | |
DMN61D9UDW-7
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.35A | 94309 | $0.00 | |
BSD223PH6327XTSA1
|
Infineon Technologies | MOSFET 2P-CH 20V 0.39A SOT363 | 129951 | $0.00 | |
NTZD5110NT1G
|
ON Semiconductor | MOSFET 2N-CH 60V 0.294A SOT563 | 35505 | $0.00 | |
NTJD5121NT2G
|
ON Semiconductor | MOSFET 2N-CH 60V 0.295A SOT363 | 17070 | $0.00 | |
SSM6N56FE,LM
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A | 14027 | $0.00 | |
2N7002BKS,115
|
Nexperia USA Inc. | MOSFET 2N-CH 60V 0.3A 6TSSOP | 739766 | $0.00 |