Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
2SC5066-O,LF Toshiba Semiconductor and Storage RF TRANS NPN 12V 7GHZ SSM 7662 $0.00
BFP196WH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 7.5GHZ SOT343-4 8395 $0.00
BFP183E7764HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT143-4 8124 $0.00
BFR181WH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT323-3 44657 $0.00
MMBT5179 ON Semiconductor RF TRANS NPN 12V 2GHZ SOT23-3 75300 $0.00
MMBT918LT1G ON Semiconductor RF TRANS NPN 15V 600MHZ SOT23-3 8404 $0.00
MMBTH81 ON Semiconductor RF TRANS PNP 20V 600MHZ SOT23-3 35592 $0.00
MMBTH10-4LT1G ON Semiconductor RF TRANS NPN 25V 800MHZ SOT23-3 11729 $0.00
MMBTH10LT1G ON Semiconductor RF TRANS NPN 25V 650MHZ SOT23-3 40591 $0.00
KST10MTF ON Semiconductor RF TRANS NPN 25V 650MHZ SOT23-3 17197 $0.00