Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFR106E6327HTSA1 Infineon Technologies RF TRANS NPN 15V 5GHZ SOT23-3 23499 $0.00
BFR93AWH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 6GHZ SOT323-3 13766 $0.00
BFR93AE6327HTSA1 Infineon Technologies RF TRANS NPN 12V 6GHZ SOT23-3 34337 $0.00
BFR182E6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 3046 $0.00
BFP183WH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 8.5GHZ SOT343-4 11232 $0.00
BFR193FH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ TSFP-3 8845 $0.00
BFP196WNH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 7.5GHZ SOT343-4 5988 $0.00
BFR193E6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 44488 $0.00
BFR183E6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 11487 $0.00
BFR193WH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT323-3 20579 $0.00