Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFR380FH6327XTSA1 Infineon Technologies RF TRANS NPN 9V 14GHZ TSFP-3 0 $0.00
BFS 17P E6433 Infineon Technologies RF TRANS NPN 15V 1.4GHZ SOT23-3 0 $0.06
SS9018FBU ON Semiconductor RF TRANS NPN 15V 1.1GHZ TO92-3 0 $0.03
MT3S111TU,LF Toshiba Semiconductor and Storage RF SIGE NPN BIPOLAR TRANSISTOR N 0 $0.00
2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage RF TRANS NPN 12V 7GHZ SMINI 10 $0.00
2SC5065-O(TE85L,F) Toshiba Semiconductor and Storage RF TRANS NPN 12V 7GHZ USM 0 $0.00
BFU530WX NXP USA Inc. RF TRANS NPN 12V 11GHZ SOT323-3 0 $0.00
BFP520FH6327XTSA1 Infineon Technologies RF TRANS NPN 3.5V 45GHZ 4TSFP 97 $0.00
2SC5226A-5-TL-E ON Semiconductor RF TRANS NPN 10V 7GHZ 3MCP 14 $0.00
BFR360L3E6765XTMA1 Infineon Technologies RF TRANS NPN 9V 14GHZ TSLP-3-1 93 $0.00