Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
2SC4713KT146R ROHM Semiconductor RF TRANS NPN 6V 800MHZ SMT3 0 $0.09
SMMBTH10-4LT3G ON Semiconductor RF TRANS NPN 25V 800MHZ SOT23-3 0 $0.09
2SC5108-Y,LF Toshiba Semiconductor and Storage RF TRANS NPN 10V 6GHZ SSM 0 $0.00
2SC4098T106P ROHM Semiconductor RF TRANS NPN 25V 300MHZ UMT3 0 $0.00
BF771E6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 0 $0.09
DMC506E20R Panasonic Electronic Components RF TRANS 2 NPN 20V 650MHZ SOT363 0 $0.09
2SC5086-Y,LF Toshiba Semiconductor and Storage RF TRANS NPN 12V 7GHZ SSM 0 $0.00
BFP182WH6327XTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT343-4 0 $0.08
BFR360FH6765XTSA1 Infineon Technologies RF TRANS NPN 9V 14GHZ TSFP-3 0 $0.08
BFR380L3E6327XTMA1 Infineon Technologies RF TRANS NPN 9V 14GHZ TSLP-3-1 0 $0.00