Transphorm TPH3206LSB

Manufacturer
Transphorm
Model
TPH3206LSB
Datasheet
TPH3206LSB PDF
Description
GANFET N-CH 650V 16A PQFN
Availability
IN STOCK

Stock: 129

$10.8

Product Detail

Attribute Name Attribute Value
Technology SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 800V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Part Status Active
Drive Voltage (Max Rds On, Min Rds On) 20V
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 4V @ 7mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 150mOhm @ 14A, 20V
Series -
Power Dissipation (Max) 139W (Tc)
FET Type N-Channel
Supplier Device Package TO-247-3
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 80nC @ 20V
Vgs (Max) +22V, -6V
Drain to Source Voltage (Vdss) 1200V

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