Infineon Technologies IPG20N06S4L11ATMA1

Manufacturer
Infineon Technologies
Model
IPG20N06S4L11ATMA1
Datasheet
IPG20N06S4L11ATMA1 PDF
Description
MOSFET 2N-CH 8TDSON
Availability
OUT OF STOCK

$0.86

Product Detail

Attribute Name Attribute Value
Base Part Number SI4936
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 36mOhm @ 5.9A, 10V
Series TrenchFET®
Supplier Device Package 8-SO
FET Type 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Packaging Tape & Reel (TR)
Drain to Source Voltage (Vdss) 30V
FET Feature Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds -
Part Status Active
Current - Continuous Drain (Id) @ 25°C 4.4A
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

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