
NXP USA Inc. AFT27S006NT1
- Manufacturer
- NXP USA Inc.
- Model
- AFT27S006NT1
- Datasheet
- AFT27S006NT1 PDF
- Description
- FET RF 65V 2.17GHZ PLD1.5W
- Availability
- IN STOCK
Stock: 5915
$10.25
Product Detail
Attribute Name | Attribute Value |
---|---|
Supplier Device Package | Die |
Series | eGaN® |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Packaging | Digi-Reel® |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 20V |
Technology | GaNFET (Gallium Nitride) |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | Die |
Vgs(th) (Max) @ Id | 2.5V @ 16mA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 5V |
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