NXP USA Inc. AFT27S006NT1

Manufacturer
NXP USA Inc.
Model
AFT27S006NT1
Datasheet
AFT27S006NT1 PDF
Description
FET RF 65V 2.17GHZ PLD1.5W
Availability
IN STOCK

Stock: 5915

$10.25

Product Detail

Attribute Name Attribute Value
Supplier Device Package Die
Series eGaN®
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
FET Type N-Channel
Drain to Source Voltage (Vdss) 40V
Packaging Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 20V
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 31A (Ta)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 16mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.4mOhm @ 30A, 5V

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