IXYS-RF IXFK21N100F

Manufacturer
IXYS-RF
Model
IXFK21N100F
Datasheet
IXFK21N100F PDF
Description
MOSFET N-CH 1000V 21A TO264
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V
Series HiPerRF™
Power Dissipation (Max) 560W (Tc)
FET Type N-Channel
Supplier Device Package TO-264 (IXFK)
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 1000V
Technology MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Part Status Obsolete
Drive Voltage (Max Rds On, Min Rds On) 10V
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Vgs(th) (Max) @ Id 5.5V @ 8mA
Operating Temperature -55°C ~ 150°C (TJ)

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