IXYS IXFN38N100Q2

Manufacturer
IXYS
Model
IXFN38N100Q2
Datasheet
IXFN38N100Q2 PDF
Description
MOSFET N-CH 1000V 38A SOT-227
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Part Status Obsolete
Mounting Type Through Hole
Package / Case i4-Pac™-5 (3 Leads)
Vgs(th) (Max) @ Id 5V @ 8mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 390mOhm @ 15A, 10V
Series HiPerFET™
Power Dissipation (Max) -
FET Type N-Channel
Supplier Device Package ISOPLUS i4-PAC™
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 1000V
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V

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