IXYS IXFN106N20

Manufacturer
IXYS
Model
IXFN106N20
Datasheet
IXFN106N20 PDF
Description
MOSFET N-CH 200V 106A SOT-227B
Availability
IN STOCK

Stock: 243

$24.32

Product Detail

Attribute Name Attribute Value
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Series -
Power Dissipation (Max) 262W (Tc)
FET Type N-Channel
Supplier Device Package TO-247N
Packaging Tube
Gate Charge (Qg) (Max) @ Vgs 104nC @ 18V
Vgs (Max) +22V, -4V
Drain to Source Voltage (Vdss) 650V
Technology SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds 1526pF @ 500V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Part Status Active
Drive Voltage (Max Rds On, Min Rds On) 18V

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