Infineon Technologies IPD30N06S2L23ATMA3

Manufacturer
Infineon Technologies
Model
IPD30N06S2L23ATMA3
Datasheet
IPD30N06S2L23ATMA3 PDF
Description
MOSFET N-CH 55V 30A TO252-3
Availability
IN STOCK

Stock: 2828

Product Detail

Attribute Name Attribute Value
Technology MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 75V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Part Status Active
Drive Voltage (Max Rds On, Min Rds On) 10V
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 4V @ 200µA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 59mOhm @ 4.5A, 10V
Series U-MOSVIII-H
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
FET Type N-Channel
Supplier Device Package 8-SOP Advance (5x5)
Packaging Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 150V

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