GeneSiC Semiconductor 2N7638-GA

Manufacturer
GeneSiC Semiconductor
Model
2N7638-GA
Datasheet
2N7638-GA PDF
Description
TRANS SJT 650V 8A TO276
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Rds On (Max) @ Id, Vgs 105mOhm @ 15A
Series -
Power Dissipation (Max) 172W (Tc)
FET Type -
Supplier Device Package TO-257
Packaging Bulk
Drain to Source Voltage (Vdss) 650V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 1534pF @ 35V
Technology SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C 15A (Tc) (155°C)
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) -
Part Status Obsolete
Mounting Type Through Hole
Package / Case TO-257-3
Vgs(th) (Max) @ Id -
Operating Temperature -55°C ~ 225°C (TJ)

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