EPC EPC2010

Manufacturer
EPC
Model
EPC2010
Datasheet
EPC2010 PDF
Description
GANFET TRANS 200V 12A BUMPED DIE
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Technology GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds 145pF @ 100V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Part Status Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On) 5V
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature -40°C ~ 125°C (TJ)
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V
Series eGaN®
Power Dissipation (Max) -
FET Type N-Channel
Supplier Device Package Die
Packaging Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 5V
Vgs (Max) +6V, -5V
Drain to Source Voltage (Vdss) 200V

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