EPC EPC2001

Manufacturer
EPC
Model
EPC2001
Datasheet
EPC2001 PDF
Description
GANFET TRANS 100V 25A BUMPED DIE
Availability
OUT OF STOCK

Product Detail

Attribute Name Attribute Value
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 5V
Series eGaN®
Power Dissipation (Max) -
FET Type N-Channel
Supplier Device Package Die Outline (5-Solder Bar)
Packaging Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 5V
Vgs (Max) +6V, -5V
Drain to Source Voltage (Vdss) 100V
Technology GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 50V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Part Status Obsolete
Drive Voltage (Max Rds On, Min Rds On) 5V
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 1.2mA
Operating Temperature -40°C ~ 125°C (TJ)

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