Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IHY30N160R2XKSA1
|
Infineon Technologies | IGBT 1600V 30A 312W TO247HC-3 | 0 | $0.00 | |
|
IHY20N135R3XKSA1
|
Infineon Technologies | IGBT 1350V 40A 310W TO247HC-3 | 0 | $0.00 | |
IGA30N60H3XKSA1
|
Infineon Technologies | IGBT 600V 18A 43W TO220-3 | 0 | $0.00 | |
SKB06N60ATMA1
|
Infineon Technologies | IGBT 600V 12A 68W TO263-3-2 | 0 | $0.00 | |
RJH60F5DPQ-A0#T0
|
Renesas Electronics America | IGBT 600V 80A 260.4W TO247A | 0 | $0.00 | |
|
RJH60F4DPQ-A0#T0
|
Renesas Electronics America | IGBT 600V 60A 235.8W TO247A | 0 | $0.00 | |
RJH60D7DPM-00#T1
|
Renesas Electronics America | IGBT 600V 90A 55W TO3PFM | 0 | $0.00 | |
RJH60D6DPK-00#T0
|
Renesas Electronics America | IGBT 600V 80A 260W TO3P | 0 | $0.00 | |
|
RJH60D5DPM-00#T1
|
Renesas Electronics America | IGBT 600V 75A 45W TO3PFM | 0 | $0.00 | |
|
RJH60D5DPK-00#T0
|
Renesas Electronics America | IGBT 600V 75A 200W TO3P | 0 | $0.00 |