Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
APT25GR120BSCD10 Microsemi Corporation IGBT 1200V 75A 521W TO247 0 $0.00
RJP4010AGE-00#P5 Renesas Electronics America IGBT 400V 1.6W TSOJ8 0 $0.00
RJH1CV7DPQ-E0#T2 Renesas Electronics America IGBT 1200V 70A 320W TO247 0 $0.00
RJH1CM5DPQ-E0#T2 Renesas Electronics America IGBT 1200V 30A 245W TO247 0 $0.00
RJH1CF5RDPQ-80#T2 Renesas Electronics America IGBT 1200V 50A 192.3W TO247 0 $0.00
RJH1CF4RDPQ-80#T2 Renesas Electronics America IGBT 1200V 40A 156.2W TO247 0 $0.00
RJH1BF6RDPQ-80#T2 Renesas Electronics America IGBT 1100V 55A 227.2W TO247 0 $0.00
IRG7PH42UD1MPBF Infineon Technologies IGBT 1200V 85A 313W TO247AD 0 $0.00
IRGR2B60KDPBF Infineon Technologies IGBT 600V 6.3A 35W DPAK 0 $0.00
IRGP4266PBF Infineon Technologies IGBT 650V 140A 450W TO247AC 0 $0.00