Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IRGP4069-EPBF
|
Infineon Technologies | IGBT 600V 76A 268W TO247 | 0 | $0.00 | |
IRGB4615DPBF
|
Infineon Technologies | IGBT 600V 23A 99W TO220 | 0 | $0.00 | |
IRGB4610DPBF
|
Infineon Technologies | IGBT 600V 16A 77W TO220 | 0 | $0.00 | |
IRGB4607DPBF
|
Infineon Technologies | IGBT 600V 11A 58W TO220 | 0 | $0.00 | |
IRG7PK35UD1PBF
|
Infineon Technologies | IGBT 1400V 40A 167W TO247AC | 0 | $0.00 | |
IRG7PK35UD1-EPBF
|
Infineon Technologies | IGBT 1400V 40A 167W TO247AD | 0 | $0.00 | |
IRG7PH35UD1-EP
|
Infineon Technologies | IGBT 1200V 50A 179W TO247 | 0 | $0.00 | |
IRG7PH28UEF
|
Infineon Technologies | IGBT 1200V 15A TO247 | 0 | $0.00 | |
RJP5001APP-M0#T2
|
Renesas Electronics America | IGBT 500V TO-220FN | 0 | $0.00 | |
IRGP4263DPBF
|
Infineon Technologies | IGBT 650V 90A 325W TO-247 | 0 | $0.00 |
IRGP4069-EPBF
IRGB4615DPBF
IRG7PK35UD1PBF
IRG7PH28UEF
RJP5001APP-M0#T2