Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
NGTB30N120LWG ON Semiconductor IGBT 1200V 30A TO247 0 $0.00
NGTB30N120IHSWG ON Semiconductor IGBT 1200V 30A TO247 0 $0.00
NGTB30N120IHLWG ON Semiconductor IGBT 1200V 30A TO247 0 $0.00
NGTB20N60L2TF1G ON Semiconductor IGBT 600V 20A TO3PF 0 $0.00
NGTB25N120FLWG ON Semiconductor IGBT 1200V 25A TO247-3 0 $0.00
NGTB20N120IHSWG ON Semiconductor IGBT 1200V 20A TO247 0 $0.00
IRGS4630DTRRPBF Infineon Technologies IGBT 600V 47A 206W D2PAK 0 $0.00
IRGS4630DTRLPBF Infineon Technologies IGBT 600V 47A 206W D2PAK 0 $0.00
IRGS4630DPBF Infineon Technologies IGBT 600V 47A 206W D2PAK 0 $0.00
IRGS4620DTRRPBF Infineon Technologies IGBT 600V 32A 140W D2PAK 0 $0.00