Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IRG7CH73K10EF-R
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH73K10EF
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH50UEF
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH50UED
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH46UED
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH46UEF
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH42UED
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH42UEF
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH35UEF
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 | |
|
IRG7CH35UED
|
Infineon Technologies | IGBT 1200V ULTRA FAST DIE | 0 | $0.00 |