Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
NGTB40N65IHRTG ON Semiconductor 650V/40A RC IGBT 85 $3.19
STGWT60V60DF STMicroelectronics IGBT 600V 80A 375W TO3P 68 $5.60
STGWA60H65DFB STMicroelectronics IGBT BIPO 650V 60A TO247-3 81 $5.57
IXGH48N60C3 IXYS IGBT 600V 75A 300W TO247AD 97 $5.43
RJP60F4DPM-00#T1 Renesas Electronics America IGBT 600V 60A 41.2W TO-3PFM 88 $6.06
IKB06N60TATMA1 Infineon Technologies IGBT 600V 12A 88W TO263-3 176 $2.11
IXYB82N120C3H1 IXYS IGBT 1200V 164A 1040W PLUS264 29 $21.62
STGW60H65DFB STMicroelectronics IGBT 650V 80A 375W TO-247 0 $5.26
IKW40N65H5FKSA1 Infineon Technologies IGBT 650V 74A 255W PG-TO247-3 0 $4.73
HGTG5N120BND ON Semiconductor IGBT 1200V 21A 167W TO247 0 $2.81