Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXYH40N120B3D1 IXYS IGBT 1200V 86A 480W TO247 139 $8.87
IRGP4063DPBF Infineon Technologies IGBT 600V 96A 330W TO247AC 912 $8.85
IRG4PC50KDPBF Infineon Technologies IGBT 600V 52A 200W TO247AC 5258 $8.83
IXYH24N90C3D1 IXYS IGBT 900V 44A 200W C3 TO-247 150 $8.75
IXXH80N65B4H1 IXYS IGBT 650V 160A 625W TO247AD 942 $8.75
IXYH100N65C3 IXYS IGBT 650V 200A 830W TO247 316 $8.45
FGH40T120SMD-F155 ON Semiconductor IGBT 1200V 80A 555W TO247-3 900 $8.43
APT25GR120BD15 Microsemi Corporation IGBT 1200V 75A 521W TO247 190 $8.39
IGW60T120FKSA1 Infineon Technologies IGBT 1200V 100A 375W TO247-3 320 $8.39
IRGP4069DPBF Infineon Technologies IGBT 600V 76A 268W TO247AC 2659 $8.18