Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
STGB30NC60WT4
|
STMicroelectronics | IGBT 600V 60A 200W D2PAK | 2039 | $0.00 | |
STGD10NC60SDT4
|
STMicroelectronics | IGBT 600V 18A 60W DPAK | 2145 | $0.00 | |
STGW45HF60WD
|
STMicroelectronics | IGBT 600V 70A 250W TO247 | 103 | $2.63 | |
HGT1S10N120BNST
|
ON Semiconductor | IGBT 1200V 35A 298W TO263AB | 1209 | $0.00 | |
STGD10NC60ST4
|
STMicroelectronics | IGBT 600V 18A 60W DPAK | 2406 | $2.51 | |
STGB10H60DF
|
STMicroelectronics | IGBT 600V 20A 115W D2PAK | 1990 | $0.00 | |
STGB19NC60WT4
|
STMicroelectronics | IGBT 600V 40A 130W D2PAK | 2467 | $0.00 | |
STGB19NC60HDT4
|
STMicroelectronics | IGBT 600V 40A 130W D2PAK | 1019 | $0.00 | |
STGW19NC60H
|
STMicroelectronics | IGBT 600V 42A 140W TO-247 | 1418 | $2.39 | |
STGB15M65DF2
|
STMicroelectronics | TRENCH GATE FIELD-STOP IGBT M SE | 1945 | $0.00 |
STGB30NC60WT4
STGD10NC60SDT4
STGW45HF60WD
HGT1S10N120BNST
STGB10H60DF
STGW19NC60H