Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
RGT40NS65DGC9
|
ROHM Semiconductor | IGBT | 1000 | $2.89 | |
RGT40TM65DGC9
|
ROHM Semiconductor | FIELD STOP TRENCH IGBT | 1000 | $2.87 | |
FGH40N60UFTU
|
ON Semiconductor | IGBT 600V 80A 290W TO247 | 429 | $2.85 | |
NGTB30N135IHR1WG
|
ON Semiconductor | IGBT 1350V 30A TO247 | 54 | $2.80 | |
|
|
ON Semiconductor | IGBT 600V 40A 62.5W TO-3PF | 260 | $2.76 | |
NGTB15N120IHRWG
|
ON Semiconductor | IGBT 1200V 15A TO247 | 88 | $2.74 | |
HGTP12N60A4D
|
ON Semiconductor | IGBT 600V 54A 167W TO220AB | 492 | $2.63 | |
RGT30NS65DGC9
|
ROHM Semiconductor | IGBT | 1000 | $2.53 | |
RGT30TM65DGC9
|
ROHM Semiconductor | FIELD STOP TRENCH IGBT | 1000 | $2.49 | |
FGH20N60SFDTU
|
ON Semiconductor | IGBT 600V 40A 165W TO247 | 294 | $2.46 |
RGT40NS65DGC9
RGT40TM65DGC9
FGH40N60UFTU
NGTB30N135IHR1WG
HGTP12N60A4D