Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXBH40N160 IXYS IGBT 1600V 33A 350W TO247AD 16 $19.56
APT35GP120BG Microsemi Corporation IGBT 1200V 96A 543W TO247 20 $17.70
APT85GR120L Microsemi Corporation IGBT 1200V 170A 962W TO264 1 $16.19
IRG4PSH71KDPBF Infineon Technologies IGBT 1200V 78A 350W SUPER247 11 $14.93
IXXK160N65B4 IXYS IGBT 650V 310A 940W TO264 25 $14.07
APT64GA90B2D30 Microsemi Corporation IGBT 900V 117A 500W TO-247 2 $12.95
STGWA40S120DF3 STMicroelectronics IGBT 1200V 40A TO247-3L 3 $12.12
IXGH2N250 IXYS IGBT 2500V 5.5A 32W TO247 24 $11.91
APT80GA60B Microsemi Corporation IGBT 600V 143A 625W TO247 11 $11.75
APT40GR120B2D30 Microsemi Corporation IGBT 1200V 88A 500W TO247 17 $11.73