Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IGD01N120H2BUMA1 Infineon Technologies IGBT 1200V 3.2A 28W TO252-3 0 $0.62
AIHD04N60RATMA1 Infineon Technologies IC DISCRETE 600V TO252-3 0 $0.62
IXA4IF1200UC-TRL IXYS IGBT 1200V 9A 45W TO252AA 0 $0.60
IKD03N60RFAATMA1 Infineon Technologies IGBT 600V 5A 53.6W TO252-3 0 $0.60
STGB6M65DF2 STMicroelectronics IGBT TRENCH 650V 12A D2PAK 0 $0.59
AIHD03N60RFATMA1 Infineon Technologies IC DISCRETE 600V TO252-3 0 $0.57
IKD04N60RFATMA1 Infineon Technologies IGBT TRENCH 600V 8A TO252-3 0 $0.00
SGD02N60BUMA1 Infineon Technologies IGBT 600V 6A 30W TO252-3 0 $0.55
IXA4I1200UC-TRL IXYS IGBT 1200V 9A 45W TO252AA 0 $0.47
AOD7B65M3 Alpha & Omega Semiconductor Inc. IGBT 650V 7A TO252 0 $0.37