Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IGD01N120H2BUMA1
|
Infineon Technologies | IGBT 1200V 3.2A 28W TO252-3 | 0 | $0.62 | |
AIHD04N60RATMA1
|
Infineon Technologies | IC DISCRETE 600V TO252-3 | 0 | $0.62 | |
IXA4IF1200UC-TRL
|
IXYS | IGBT 1200V 9A 45W TO252AA | 0 | $0.60 | |
IKD03N60RFAATMA1
|
Infineon Technologies | IGBT 600V 5A 53.6W TO252-3 | 0 | $0.60 | |
STGB6M65DF2
|
STMicroelectronics | IGBT TRENCH 650V 12A D2PAK | 0 | $0.59 | |
AIHD03N60RFATMA1
|
Infineon Technologies | IC DISCRETE 600V TO252-3 | 0 | $0.57 | |
IKD04N60RFATMA1
|
Infineon Technologies | IGBT TRENCH 600V 8A TO252-3 | 0 | $0.00 | |
SGD02N60BUMA1
|
Infineon Technologies | IGBT 600V 6A 30W TO252-3 | 0 | $0.55 | |
IXA4I1200UC-TRL
|
IXYS | IGBT 1200V 9A 45W TO252AA | 0 | $0.47 | |
AOD7B65M3
|
Alpha & Omega Semiconductor Inc. | IGBT 650V 7A TO252 | 0 | $0.37 |
IGD01N120H2BUMA1
AIHD04N60RATMA1
IXA4IF1200UC-TRL
AOD7B65M3