Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FGH20N6S2D
|
ON Semiconductor | IGBT 600V 28A 125W TO247 | 0 | $0.00 | |
FGB30N6S2
|
ON Semiconductor | IGBT 600V 45A 167W TO263AB | 0 | $0.00 | |
FGB30N6S2DT
|
ON Semiconductor | IGBT 600V 45A 167W TO263AB | 0 | $0.00 | |
FGB40N6S2T
|
ON Semiconductor | IGBT 600V 75A 290W TO263AB | 0 | $0.00 | |
STGD3NB60HDT4
|
STMicroelectronics | IGBT 600V 10A 50W DPAK | 0 | $0.00 | |
STGB7NB60KDT4
|
STMicroelectronics | IGBT 600V 14A 80W D2PAK | 0 | $0.00 | |
STGB3NB60SDT4
|
STMicroelectronics | IGBT 600V 6A 70W D2PAK | 0 | $0.00 | |
STGB3NB60KDT4
|
STMicroelectronics | IGBT 600V 10A 50W D2PAK | 0 | $0.00 | |
SGS5N60RUFDTU
|
ON Semiconductor | IGBT 600V 8A 35W TO220F | 0 | $0.00 | |
HGTD3N60C3S9A
|
ON Semiconductor | IGBT 600V 6A 33W TO252AA | 0 | $0.00 |
FGH20N6S2D
FGB30N6S2
STGD3NB60HDT4
STGB7NB60KDT4
SGS5N60RUFDTU
HGTD3N60C3S9A