Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IRG4PH50KPBF
|
Infineon Technologies | IGBT 1200V 45A 200W TO247AC | 0 | $3.67 | |
IRG8CH37K10F
|
Infineon Technologies | IGBT 1200V 100A DIE | 0 | $3.67 | |
APT20GN60BDQ1G
|
Microsemi Corporation | IGBT 600V 40A 136W TO247 | 0 | $3.67 | |
IXGA36N60A3
|
IXYS | IGBT | 0 | $3.66 | |
RGTH80TS65DGC11
|
ROHM Semiconductor | IGBT 650V 70A 234W TO-247N | 0 | $3.66 | |
IXA20IF1200HB
|
IXYS | IGBT 1200V 38A 165W TO247 | 0 | $3.61 | |
IXGH12N120A3
|
IXYS | IGBT 1200V 22A 100W TO247 | 0 | $3.61 | |
IXBH5N160G
|
IXYS | IGBT 1600V 5.7A 68W TO247AD | 0 | $3.61 | |
IXGA12N120A3
|
IXYS | IGBT 1200V 22A 100W TO263 | 0 | $3.61 | |
IXDP20N60B
|
IXYS | IGBT 600V 32A 140W TO220AB | 0 | $3.61 |
IRG4PH50KPBF
IRG8CH37K10F
APT20GN60BDQ1G
IXGA36N60A3
RGTH80TS65DGC11
IXA20IF1200HB
IXDP20N60B