Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRGBC30FD2 Infineon Technologies IGBT W/DIODE 600V 31A TO-220AB 0 $0.00
IRGBC20UD2 Infineon Technologies IGBT W/DIODE 600V 13A TO-220AB 0 $0.00
IRGPC30FD2 Infineon Technologies IGBT W/DIODE 600V 31A TO-247AC 0 $0.00
IRGPC40FD2 Infineon Technologies IGBT W/DIODE 600V 49A TO-247AC 0 $0.00
IRGPC50FD2 Infineon Technologies IGBT W/DIODE 600V 70A TO-247AC 0 $0.00
IRGPC50UD2 Infineon Technologies IGBT W/DIODE 600V 55A TO-247AC 0 $0.00
IRGBC30S Infineon Technologies IGBT STD 600V 34A TO-220AB 0 $0.00
IRGBC40S Infineon Technologies IGBT STD 600V 50A TO-220AB 0 $0.00
IRGPC50F Infineon Technologies IGBT FAST 600V 70A TO-247AC 0 $0.00
IRGPC40UD2 Infineon Technologies IGBT W/DIODE 600V 40A TO-247AC 0 $0.00