Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IRG4BC10KPBF Infineon Technologies IGBT 600V 9A 38W TO220AB 0 $0.00
IRG4BC10SPBF Infineon Technologies IGBT 600V 14A 38W TO220AB 0 $0.00
IRG4PSH71UPBF Infineon Technologies IGBT 1200V 99A 350W SUPER247 0 $0.00
IRG4PSH71KPBF Infineon Technologies IGBT 1200V 78A 350W SUPER247 0 $0.00
IRG4PSC71KPBF Infineon Technologies IGBT 600V 85A 350W SUPER247 0 $0.00
IRG4PSC71UPBF Infineon Technologies IGBT 600V 85A 350W SUPER247 0 $0.00
IRG4PC50KPBF Infineon Technologies IGBT 600V 52A 200W TO247AC 0 $0.00
IRGP4050PBF Infineon Technologies IGBT 250V 104A 330W TO247AC 0 $0.00
IRG4P254SPBF Infineon Technologies IGBT 250V 98A 200W TO247AC 0 $0.00
IRG4PC30WPBF Infineon Technologies IGBT 600V 23A 100W TO247AC 0 $0.00