Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
IGC36T120T8LX1SA1
|
Infineon Technologies | IGBT 1200V 35A DIE | 0 | $7.20 | |
APT50GN60BDQ2G
|
Microsemi Corporation | IGBT 600V 107A 366W TO247 | 0 | $7.18 | |
IXGH28N90B
|
IXYS | IGBT 900V 51A 200W TO247AD | 0 | $7.75 | |
IXBT6N170
|
IXYS | IGBT 1700V 12A 75W TO268 | 0 | $7.75 | |
APT70GR65B
|
Microsemi Corporation | IGBT 650V 134A 595W TO-247 | 19 | $7.71 | |
|
IKFW90N60EH3XKSA1
|
Infineon Technologies | INDUSTRY 14 | 0 | $8.37 | |
|
APT70GR65B2DU40
|
Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | 0 | $8.30 | |
IXGR50N90B2D1
|
IXYS | IGBT 900V 40A 100W ISOPLUS247 | 0 | $8.29 | |
|
IXBH10N170
|
IXYS | IGBT 1700V 20A 140W TO247AD | 14 | $9.52 | |
APT100GN60B2G
|
Microsemi Corporation | IGBT 600V 229A 625W TMAX | 0 | $9.44 |