Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part Number Manufacturer Description Quantity Price Option
IXST40N60B IXYS IGBT 600V 75A 280W TO268 0 $0.00
IXST35N120B IXYS IGBT 1200V 70A 300W TO268 0 $0.00
IXST30N60CD1 IXYS IGBT 600V 55A 200W TO268 0 $0.00
IXST30N60C IXYS IGBT 600V 55A 200W TO268 0 $0.00
IXST30N60BD1 IXYS IGBT 600V 55A 200W TO268 0 $0.00
IXST24N60BD1 IXYS IGBT 600V 48A 150W TO268 0 $0.00
IXST15N120BD1 IXYS IGBT 1200V 30A 150W TO268 0 $0.00
IXSR35N120BD1 IXYS IGBT 1200V 70A 250W ISOPLUS247 0 $0.00
IXSP15N120B IXYS IGBT 1200V 30A 150W TO220AB 0 $0.00
IXSK80N60B IXYS IGBT 600V 160A 500W TO264 0 $0.00