Single FETs, MOSFETs
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
RQ6E060ATTCR
|
ROHM Semiconductor | RQ6E060AT IS LOW ON-RESISTANCE M | 0 | $0.67 | |
SIS110DN-T1-GE3
|
Vishay / Siliconix | MOSFET N-CHAN 100V POWERPAK 1212 | 58 | $0.00 | |
TSM220NB06CR RLG
|
Taiwan Semiconductor Corporation | MOSFET SINGLE N-CHANNEL TRENCH | 0 | $0.27 | |
RQ1E075XNTCR
|
ROHM Semiconductor | 4V DRIVE NCH MOSFET. MOSFETS ARE | 0 | $0.00 | |
SIRA10BDP-T1-GE3
|
Vishay / Siliconix | MOSFET N-CHAN 30V | 0 | $0.82 | |
SQJA37EP-T1_GE3
|
Vishay / Siliconix | MOSFET P-CHAN 30V PPAK SO-8L | 100 | $0.00 | |
SISS65DN-T1-GE3
|
Vishay / Siliconix | MOSFET P-CHAN 30V PPAK 1212-8S | 0 | $0.89 | |
STD20P3H6AG
|
STMicroelectronics | MOSFET PCH 30V 20A DPAK | 0 | $0.37 | |
NVD5C478NLT4G
|
ON Semiconductor | T6 40V DPAK EXPANSION AND | 0 | $0.00 | |
SIS126DN-T1-GE3
|
Vishay / Siliconix | MOSFET N-CH 80V PP 1212-8 | 50 | $0.94 |
RQ6E060ATTCR
SIS110DN-T1-GE3
TSM220NB06CR RLG
RQ1E075XNTCR
SIRA10BDP-T1-GE3
SQJA37EP-T1_GE3
SISS65DN-T1-GE3
STD20P3H6AG
NVD5C478NLT4G
SIS126DN-T1-GE3