FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
SIA920DJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 8V 4.5A SC-70 | 0 | $0.00 | |
|
SIA915DJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 30V 4.5A SC-70-6L | 0 | $0.00 | |
SI7270DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 8A PPAK SO-8 | 0 | $0.00 | |
SI4618DY-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 8A 8SO | 0 | $0.00 | |
FDMS3660S-F121
|
ON Semiconductor | MOSFET 2N-CH 30V 13A/30A 8-PQFN | 0 | $0.00 | |
APTMC60TL11CT3AG
|
Microsemi Corporation | MOSFET 4N-CH 1200V 28A SP3 | 0 | $0.00 | |
PMDPB95XNE,115
|
NXP USA Inc. | MOSFET 2N-CH 30V 2.4A HUSON6 | 0 | $0.00 | |
|
PMDPB70EN,115
|
Nexperia USA Inc. | MOSFET 2N-CH 30V 3.5A 6DFN | 0 | $0.00 | |
|
PMDPB56XN,115
|
NXP USA Inc. | MOSFET 2N-CH 30V 3.1A HUSON6 | 0 | $0.00 | |
|
PMDPB42UN,115
|
NXP USA Inc. | MOSFET 2N-CH 20V 3.9A HUSON6 | 0 | $0.00 |