FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FDC6304P
|
ON Semiconductor | MOSFET 2P-CH 25V 0.46A SSOT-6 | 13781 | $0.00 | |
FDC6561AN
|
ON Semiconductor | MOSFET 2N-CH 30V 2.5A SSOT6 | 27681 | $0.00 | |
PMDXB600UNEZ
|
Nexperia USA Inc. | MOSFET 2N-CH 20V 0.6A 6DFN | 21178 | $0.00 | |
SI3585CDV-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 3.9A 6TSOP | 14115 | $0.00 | |
SIA527DJ-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 12V 4.5A SC-70-6 | 36100 | $0.00 | |
DMN3018SSD-13
|
Diodes Incorporated | MOSFET 2N-CH 30V 6.7A 8SO | 19978 | $0.00 | |
QS6M3TR
|
ROHM Semiconductor | MOSFET N/P-CH 30V/20V 1.5A TSMT6 | 38420 | $0.00 | |
SIA931DJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 30V 4.5A SC70-6L | 8155 | $0.00 | |
SI1902DL-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 20V 0.66A SC-70-6 | 15000 | $0.00 | |
SI1965DH-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 12V 1.3A SC70-6 | 11765 | $0.00 |
FDC6304P
PMDXB600UNEZ
SI3585CDV-T1-GE3
SIA527DJ-T1-GE3
DMN3018SSD-13
QS6M3TR
SI1902DL-T1-GE3