FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
ALD1107PBL
|
Advanced Linear Devices, Inc. | MOSFET 4P-CH 10.6V 14DIP | 903 | $4.51 | |
ALD1105PBL
|
Advanced Linear Devices, Inc. | MOSFET 2N/2P-CH 10.6V 14DIP | 641 | $4.51 | |
ALD1106PBL
|
Advanced Linear Devices, Inc. | MOSFET 4N-CH 10.6V 14DIP | 1538 | $4.51 | |
ALD1115PAL
|
Advanced Linear Devices, Inc. | MOSFET N/P-CH 10.6V 8DIP | 124 | $3.63 | |
DN2625DK6-G
|
Microchip Technology | MOSFET 2N-CH 250V 1.1A 8VDFN | 309 | $2.56 | |
IRFI4019H-117P
|
Infineon Technologies | MOSFET 2N-CH 150V 8.7A TO-220FP | 1023 | $2.52 | |
SI7956DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 150V 2.6A PPAK SO-8 | 12672 | $0.00 | |
EPC2111
|
EPC | GAN TRANS ASYMMETRICAL HALF BRID | 23799 | $0.00 | |
CSD87335Q3DT
|
Texas Instruments | MOSFET 2N-CH 30V 25A | 1996 | $0.00 | |
FDMS9600S
|
ON Semiconductor | MOSFET 2N-CH 30V 12A/16A POWER56 | 4879 | $0.00 |
ALD1107PBL
ALD1115PAL
DN2625DK6-G
IRFI4019H-117P
SI7956DP-T1-GE3
EPC2111
CSD87335Q3DT
FDMS9600S