FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BSM300D12P2E001
|
ROHM Semiconductor | MOSFET 2N-CH 1200V 300A | 22 | $663.08 | |
BSM080D12P2C008
|
ROHM Semiconductor | SIC POWER MODULE-1200V-80A | 14 | $301.74 | |
FF11MR12W1M1B11BOMA1
|
Infineon Technologies | MOSFET 2 N-CH 1200V 100A MODULE | 7 | $155.83 | |
AUIRF7341QTR
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | 3682 | $0.00 | |
|
AUIRF7313QTR
|
Infineon Technologies | MOSFET 2N-CH 30V 6.5A 8SOIC | 3762 | $0.00 | |
IPG20N04S4L07ATMA1
|
Infineon Technologies | MOSFET 2N-CH 8TDSON | 1540 | $0.00 | |
IPG20N04S408AATMA1
|
Infineon Technologies | MOSFET 2N-CH 8TDSON | 1134 | $0.00 | |
|
IPG20N04S408ATMA1
|
Infineon Technologies | MOSFET 2N-CH 40V 20A TDSON-8 | 3758 | $0.00 | |
|
AUIRF7103QTR
|
Infineon Technologies | MOSFET 2N-CH 50V 3A 8SOIC | 2976 | $0.00 | |
BSO303PHXUMA1
|
Infineon Technologies | MOSFET 2P-CH 30V 7A 8DSO | 0 | $0.00 |