FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
DMC2710UDW-7
|
Diodes Incorporated | MOSFET BVDSS: 8V-24V SOT363 | 0 | $0.07 | |
SSM6N37FE,LM
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.25A 2-2N1D | 0 | $0.00 | |
SSM6N15AFE,LM
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A ES6 | 0 | $0.00 | |
DMN62D0UDW-13
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.35A SOT363 | 0 | $0.06 | |
|
DMN32D4SDW-13
|
Diodes Incorporated | MOSFET 2N-CH 30V 0.65A SOT363 | 0 | $0.06 | |
2N7002PSZ
|
Nexperia USA Inc. | MOSFET 2N-CH 60V 0.32A 6TSSOP | 0 | $0.06 | |
|
NTJD1155LT2G
|
ON Semiconductor | MOSFET N/P-CH SC-88-6 | 0 | $0.06 | |
|
NX3020NAKVYL
|
Nexperia USA Inc. | MOSFET 2N-CH 30V 0.2A SOT666 | 0 | $0.06 | |
|
DMN3401LDW-13
|
Diodes Incorporated | MOSFET BVDSS: 25V-30V SOT363 | 0 | $0.06 | |
|
DMC2710UDW-13
|
Diodes Incorporated | MOSFET BVDSS: 8V-24V SOT363 | 0 | $0.05 |