FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
FDWS9520L-F085
|
ON Semiconductor | PT8P 40V LL DUAL PQFN56 | 0 | $0.90 | |
IPG20N06S4L11AATMA1
|
Infineon Technologies | MOSFET 2N-CH 8TDSON | 0 | $0.89 | |
NVMFD5489NLWFT1G
|
ON Semiconductor | MOSFET 2N-CH 60V 4.5A DFN8 | 0 | $0.88 | |
FDWS9420-F085
|
ON Semiconductor | MOSFET 2 N-CH 40V 20A 8-PQFN | 0 | $0.87 | |
SI4936ADY-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 4.4A 8-SOIC | 0 | $0.86 | |
LN60A01ES-LF
|
Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | 0 | $0.86 | |
NVMFD5485NLWFT3G
|
ON Semiconductor | MOSFET 2N-CH 60V 5.3A DFN8 | 0 | $0.85 | |
NTMFD5C466NLT1G
|
ON Semiconductor | T6 40V LL S08FL DS | 0 | $0.85 | |
IRF7341GTRPBF
|
Infineon Technologies | MOSFET N-CH 55V 5.1A | 0 | $0.84 | |
IRFHM792TRPBF
|
Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | 0 | $0.84 |
FDWS9520L-F085
IPG20N06S4L11AATMA1
NVMFD5489NLWFT1G
SI4936ADY-T1-GE3
IRF7341GTRPBF