FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
SI7958DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 40V 7.2A PPAK SO-8 | 0 | $0.00 | |
SI7945DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 30V 7A PPAK SO-8 | 0 | $0.00 | |
SI7844DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 6.4A PPAK SO-8 | 0 | $0.00 | |
SI7501DN-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 30V 5.4A 1212-8 | 0 | $0.00 | |
SI6963BDQ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 3.4A 8-TSSOP | 0 | $0.00 | |
SI6928DQ-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 4A 8-TSSOP | 0 | $0.00 | |
SI6925ADQ-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 20V 3.3A 8-TSSOP | 0 | $0.00 | |
SI6562DQ-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 8-TSSOP | 0 | $0.00 | |
TPC8213-H(TE12LQ,M
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 5A SOP8 | 0 | $0.00 | |
TPC8212-H(TE12LQ,M
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 6A SOP8 | 0 | $0.00 |
SI7958DP-T1-GE3
SI7501DN-T1-GE3
SI6963BDQ-T1-GE3
TPC8213-H(TE12LQ,M