FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
SI5915DC-T1-E3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 3.4A 1206-8 | 0 | $0.00 | |
|
SI5915BDC-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 4A 1206-8 | 0 | $0.00 | |
|
SI5915BDC-T1-E3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 4A 1206-8 | 0 | $0.00 | |
|
SI5905DC-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 3A 1206-8 | 0 | $0.00 | |
|
SI5905DC-T1-E3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 3A 1206-8 | 0 | $0.00 | |
|
SI5905BDC-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 4A 1206-8 | 0 | $0.00 | |
|
SI5905BDC-T1-E3
|
Vishay / Siliconix | MOSFET 2P-CH 8V 4A 1206-8 | 0 | $0.00 | |
|
SI5903DC-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 2.1A 1206-8 | 0 | $0.00 | |
|
SI5515DC-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 4.4A 1206-8 | 0 | $0.00 | |
|
SI5513DC-T1-GE3
|
Vishay / Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | 0 | $0.00 |