FET, MOSFET Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
SIZ700DT-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 20V 16A PPAK 1212-8 | 0 | $0.00 | |
SIA911DJ-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 4.5A SC70-6 | 0 | $0.00 | |
SI9936BDY-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 30V 4.5A 8-SOIC | 0 | $0.00 | |
SI9926BDY-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 20V 6.2A 8-SOIC | 0 | $0.00 | |
SI7983DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 20V 7.7A PPAK SO-8 | 0 | $0.00 | |
SI7980DP-T1-E3
|
Vishay / Siliconix | MOSFET 2N-CH 20V 8A PPAK SO-8 | 0 | $0.00 | |
SI7964DP-T1-GE3
|
Vishay / Siliconix | MOSFET 2N-CH 60V 6.1A PPAK SO-8 | 0 | $0.00 | |
SI7940DP-T1-E3
|
Vishay / Siliconix | MOSFET 2N-CH 12V 7.6A PPAK SO-8 | 0 | $0.00 | |
SI7925DN-T1-GE3
|
Vishay / Siliconix | MOSFET 2P-CH 12V 4.8A 1212-8 | 0 | $0.00 | |
SI7925DN-T1-E3
|
Vishay / Siliconix | MOSFET 2P-CH 12V 4.8A 1212-8 | 0 | $0.00 |
SIZ700DT-T1-GE3
SIA911DJ-T1-GE3
SI9936BDY-T1-GE3
SI7983DP-T1-GE3
SI7925DN-T1-GE3