Single, Pre-Biased Bipolar Transistors
Pre-biased bipolar transistors have internal resistors designed to maintain the device near the bias or operating point with no input signal applied. Transistor biasing allows the transistor to work more efficiently and produce a stable, undistorted output signal. Pre-biased transistors reduce the number of external circuit components required, thereby reducing project costs.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
RN2426(TE85L,F)
|
Toshiba Semiconductor and Storage | TRANSISTOR PNP BRT Q1BSR1KOHM Q1 | 0 | $0.00 | |
|
RN2425(TE85L,F)
|
Toshiba Semiconductor and Storage | TRANSISTOR PNP BRT Q1BSR0.47KOHM | 0 | $0.00 | |
DTC114ECA-TP
|
Micro Commercial Co | TRANS PREBIAS NPN 200MW SOT23 | 0 | $0.00 | |
|
DTB113ECHZGT116
|
ROHM Semiconductor | DTB113ECHZG IS THE HIGH RELIABIL | 0 | $0.00 | |
|
RN2113,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR47KOHM Q1BERINFINIT | 0 | $0.00 | |
|
RN2109,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR47KOHM Q1BER22KOHM | 0 | $0.00 | |
|
RN2108,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR22KOHM Q1BER47KOHM | 0 | $0.00 | |
|
RN2105,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR2.2KOHM Q1BER47KOHM | 0 | $0.00 | |
|
RN2104,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR47KOHM Q1BER47KOHM | 0 | $0.00 | |
|
RN2103,LF(CT
|
Toshiba Semiconductor and Storage | PNP BRT Q1BSR22KOHM Q1BER22KOHM | 0 | $0.00 |