Single, Pre-Biased Bipolar Transistors
Pre-biased bipolar transistors have internal resistors designed to maintain the device near the bias or operating point with no input signal applied. Transistor biasing allows the transistor to work more efficiently and produce a stable, undistorted output signal. Pre-biased transistors reduce the number of external circuit components required, thereby reducing project costs.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BCR119WH6327XTSA1
|
Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 0 | $0.03 | |
|
BCR116WH6327XTSA1
|
Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 0 | $0.03 | |
|
BCR112WH6327XTSA1
|
Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 0 | $0.03 | |
|
BCR108WH6433XTMA1
|
Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 0 | $0.03 | |
|
BCR108WH6327XTSA1
|
Infineon Technologies | TRANS PREBIAS NPN 250MW SOT323-3 | 0 | $0.03 | |
PDTA123JM,315
|
Nexperia USA Inc. | TRANS PREBIAS PNP 250MW SOT883 | 0 | $0.03 | |
|
PDTC115EM,315
|
Nexperia USA Inc. | TRANS NPN W/RES 50V SOT-883 | 0 | $0.00 | |
RN2109MFV,L3F
|
Toshiba Semiconductor and Storage | X34 PB-F VESM TRANSISTOR PD 150M | 0 | $0.03 | |
|
RN1132MFV,L3F
|
Toshiba Semiconductor and Storage | X34 PB-F VESM TRANSISTOR PD 150M | 0 | $0.03 | |
|
RN1119MFV,L3F
|
Toshiba Semiconductor and Storage | X34 PB-F VESM TRANSISTOR PD 150M | 0 | $0.03 |