Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
2224-6L Microsemi Corporation RF TRANS NPN 40V 2.4GHZ 55LV 0 $0.00
1517-20M Microsemi Corporation RF TRANS NPN 65V 1.65GHZ 55LV-1 0 $0.00
UTV8100B Microsemi Corporation RF TRANS NPN 60V 860MHZ 55RT 0 $0.00
TAN15 Microsemi Corporation RF TRANS NPN 50V 1.215GHZ 55LT 0 $0.00
MS2202 Microsemi Corporation RF TRANS NPN 3.5V 1.15GHZ M115 0 $0.00
MDS150 Microsemi Corporation RF TRANS NPN 60V 1.09GHZ 55AW 0 $0.00
MS2422 Microsemi Corporation RF TRANS NPN 65V 1.215GHZ M138 0 $0.00
MS2421 Microsemi Corporation RF TRANS NPN 65V 1.15GHZ M103 0 $0.00
MS2204 Microsemi Corporation RF TRANS NPN 20V 1.09GHZ M115 0 $0.00
UTV005 Microsemi Corporation RF TRANS NPN 24V 860MHZ 55FT 0 $0.00