Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFR 340T E6327 Infineon Technologies RF TRANS NPN 9V 14GHZ SC75 0 $0.00
BFR 183T E6327 Infineon Technologies RF TRANS NPN 12V 8GHZ SC75 0 $0.00
BFR 182T E6327 Infineon Technologies RF TRANS NPN 12V 8GHZ SC75 0 $0.00
BFR 182 B6663 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 0 $0.00
BFR 181T E6327 Infineon Technologies RF TRANS NPN 12V 8GHZ SC75 0 $0.00
BFR 181 E6780 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT23-3 0 $0.00
BFP 620F E7764 Infineon Technologies RF TRANS NPN 2.8V 65GHZ 4TSFP 0 $0.00
BFP420E6433HTMA1 Infineon Technologies RF TRANS NPN 5V 25GHZ SOT343-4 0 $0.00
BFG 235 E6327 Infineon Technologies RF TRANS NPN 15V 5.5GHZ SOT223-4 0 $0.00
BFG 19S E6327 Infineon Technologies RF TRANS NPN 15V 5.5GHZ SOT223-4 0 $0.00