Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFR 181W E6327 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT323-3 0 $0.00
BFP196WE6327HTSA1 Infineon Technologies RF TRANS NPN 12V 7.5GHZ SOT343-4 0 $0.00
BFP193WE6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT343-4 0 $0.00
BFP183WE6327BTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT343-4 0 $0.00
BFP182WE6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT343-4 0 $0.00
BFP 420F E6327 Infineon Technologies RF TRANS NPN 5V 25GHZ 4TSFP 0 $0.00
BFP 405F E6327 Infineon Technologies RF TRANS NPN 5V 25GHZ 4TSFP 0 $0.00
BFP540E6327BTSA1 Infineon Technologies RF TRANS NPN 5V 30GHZ SOT343-4 0 $0.00
BFP 650F E6327 Infineon Technologies RF TRANS NPN 4.5V 42GHZ 4TSFP 0 $0.00
AT-41500-GP4 Broadcom Limited RF TRANS NPN 12V 8GHZ DIE 0 $0.00