Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
| Part Number | Manufacturer | Description | Quantity | Price | Option |
|---|---|---|---|---|---|
BFR 181W E6327
|
Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 0 | $0.00 | |
BFP196WE6327HTSA1
|
Infineon Technologies | RF TRANS NPN 12V 7.5GHZ SOT343-4 | 0 | $0.00 | |
BFP193WE6327HTSA1
|
Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT343-4 | 0 | $0.00 | |
BFP183WE6327BTSA1
|
Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT343-4 | 0 | $0.00 | |
BFP182WE6327HTSA1
|
Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT343-4 | 0 | $0.00 | |
BFP 420F E6327
|
Infineon Technologies | RF TRANS NPN 5V 25GHZ 4TSFP | 0 | $0.00 | |
BFP 405F E6327
|
Infineon Technologies | RF TRANS NPN 5V 25GHZ 4TSFP | 0 | $0.00 | |
BFP540E6327BTSA1
|
Infineon Technologies | RF TRANS NPN 5V 30GHZ SOT343-4 | 0 | $0.00 | |
BFP 650F E6327
|
Infineon Technologies | RF TRANS NPN 4.5V 42GHZ 4TSFP | 0 | $0.00 | |
AT-41500-GP4
|
Broadcom Limited | RF TRANS NPN 12V 8GHZ DIE | 0 | $0.00 |
BFR 181W E6327
BFP196WE6327HTSA1
BFP 420F E6327
AT-41500-GP4