Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

Part Number Manufacturer Description Quantity Price Option
BFP760H6327XTSA1 Infineon Technologies RF TRANS NPN 4V 45GHZ SOT343 5682 $0.00
BFU530AR NXP USA Inc. RF TRANS NPN 12V 11GHZ TO236AB 13539 $0.00
BFP843H6327XTSA1 Infineon Technologies RF TRANS NPN 2.25V SOT343 3355 $0.00
BFU520WX NXP USA Inc. RF TRANS NPN 12V 10GHZ SOT323-3 29234 $0.00
BFU520AR NXP USA Inc. RF TRANS NPN 12V 10GHZ TO236AB 3670 $0.00
MCH4009-TL-H ON Semiconductor RF TRANS NPN 3.5V 25GHZ 4MCPH 10151 $0.00
BFU725F/N1,115 NXP USA Inc. RF TRANS NPN 2.8V 55GHZ 4SO 15250 $0.00
DSC9G02C0L Panasonic Electronic Components RF TRANS NPN 20V 650MHZ SSMINI3 18602 $0.00
PBR941,215 NXP USA Inc. RF TRANS NPN 10V 8GHZ TO236AB 15310 $0.00
BFP193E6327HTSA1 Infineon Technologies RF TRANS NPN 12V 8GHZ SOT143-4 10645 $0.00